Memory cell programming and deletion controlling method for non-volatile memory device, involves producing positive or negative acknowledge information after process of programming or deletion of memory cell based on content of control cell

摘要

The method involves executing programming or deletion in a homogeneous control cell (4.1) in a non-volatile memory device (1). The programming or deletion in the control cell is unfavorably defined than the programming or deletion of memory cells. A positive or negative acknowledge information is produced by an evaluation device after the process of programming or deletion of the memory cells based on the content of the control cell. An independent claim is also included for a non-volatile memory device with a control unit for programming and deletion of memory cells.