发明名称 SUBSTRATE WHOSE SINGLE CRYSTAL SILICON LAYER IS LOCALLY INTEGRATED, AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a substrate on which single crystal silicon layers are locally integrated, and its manufacturing method. SOLUTION: The substrate that is provided on a supporting plate 10, a buffer layer 11 formed on the supporting plate 10, and a primary region 30 defined in a partial region of the supporting plate 10, which is, after being fabricated separately, is provided on a single crystal silicon layer 40 fixed through bonding to the buffer layer 11 and locally integrated, and a secondary region 20 of the supporting plate 10 excluding the primary region 30, has a non-single crystal silicon layer 13 obtained through vapor deposition for the buffer layer 11. This enables a large-sized display panel and the like to be manufactured regardless of the size of a manufacturable single crystal silicon layer. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006191102(A) 申请公布日期 2006.07.20
申请号 JP20050379124 申请日期 2005.12.28
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 XIANYU WENXU;NOGUCHI TAKASHI;PARK YOUNG-SOO;CHO SE-YOUNG;YIN HUAXIANG
分类号 H01L27/12;G02F1/1368;H01L21/02;H01L21/20 主分类号 H01L27/12
代理机构 代理人
主权项
地址