| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor whose production step is simplified, as well as a liquid crystal display using the same. SOLUTION: The thin-film transistor is provided with a gate electrode 13 which is formed at an opening of a light transmission type photosensitive resin 12 on an insulating substrate 11; a gate insulating film 14 formed on the light transmission type photosensitive resin and the gate electrode; a semiconductor layer 15; an ohmic contact layer 16 and a protective film 17 which are formed on a part of the gate insulating film; and a source-drain electrode 19 which is formed on two openings of the light transmission type photosensitive resin 18 on the gate insulating film, the semiconductor layer, the ohmic contact layer, and the protective film. The gate electrode and the source-drain electrode are formed by ink jet coating using an ink containing metal particulate. COPYRIGHT: (C)2006,JPO&NCIPI |
