发明名称 SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To keep up effectively a balance between a heat dissipation from a resonator and a positive adhesion to the resonator of a p electrode in a ridge type semiconductor laser. SOLUTION: The flat top surfaceΣof a p-type contact layer 105b is a surface exposed when the unnecessary part (the upper part on the common crowning of the resonator) of the insulating wall 110 which once laminated uniformly to a junction side is removed by an etching treatment. A first metal layer 106a is formed by vapor-depositing and forming a nickel (Ni) on this flat top surfaceΣand the insulating wall 110, and its film thickness is formed about 250 nm. Then, a shielding film S made of a stripe shape Al<SB>2</SB>O<SB>3</SB>extended in the resonance direction in the flat top surface of the first metal layer 106a is formed by about 180 nm of thickness by a lift-off method. Then, the second metal layer 106b of about 250 nm of the thickness made of a nickel (Ni) is laminated by depositing on the first metal layer 106a and the shielding film S which are exposed. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006190713(A) 申请公布日期 2006.07.20
申请号 JP20040381948 申请日期 2004.12.28
申请人 TOYODA GOSEI CO LTD 发明人 IWAYAMA AKIRA;HATANO TAKASHI
分类号 H01S5/323;H01S5/022;H01S5/22 主分类号 H01S5/323
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