| 摘要 |
In a pattern inspection apparatus, influences of pattern brightness variations that is caused in association with, for example, a film thickness difference or a pattern width variation can be reduced, high sensitive pattern inspection can be implemented, and a variety of defects can be detected. Thereby, the pattern inspection apparatus adaptable to a broad range of processing steps is realized. In order to realize this, the pattern inspection apparatus of the present invention performs comparison between images of regions corresponding to patterns formed to be same patterns, thereby determining mismatch portions across the images to be defects. The apparatus includes multiple sensors capable of synchronously acquiring images of shiftable multiple detection systems different from one another, and an image comparator section corresponding thereto. In addition, the apparatus includes means of detecting a statistical offset value from the feature amount to be a defect, thereby enabling the defect to be properly detected even when a brightness difference is occurring in association with film a thickness difference in a wafer.
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