发明名称 |
Horizontal chalcogenide element defined by a pad for use in solid-state memories |
摘要 |
A process for fabricating phase-change elements having ultra small cross-sectional areas for use in phase change memory cells specifically and in semiconductor devices generally in which pads are implemented to create horizontally aligned phase change elements is disclosed. The elements thus defined may be used within chalcogenide memory cells or other semiconductor devices.
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申请公布号 |
US2006157681(A1) |
申请公布日期 |
2006.07.20 |
申请号 |
US20060378904 |
申请日期 |
2006.03.17 |
申请人 |
CHEN YI-CHOU;LUNG HSIANG-LAN;LIU RUICHEN |
发明人 |
CHEN YI-CHOU;LUNG HSIANG-LAN;LIU RUICHEN |
分类号 |
H01L29/04;G11C16/02;H01L27/24;H01L29/00;H01L45/00 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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