发明名称 |
Member having plasma-resistance for semiconductor manufacturing apparatus and method for producing the same |
摘要 |
In order to control and reduce generation of disjoined grains from a plasma-resistant member, the present invention provides a plasma-resistant member having no pores and boundary layers. In a layer structure made of yttria polycrystal and formed on a surface of a member for a semiconductor manufacturing apparatus on a side exposed to plasma, substantially no hyaline boundary layer exists in the yttria polycrystal. With this, corrosion from a boundary layer never progresses even in a plasma atmosphere. It is also possible to control and reduce disjoined grains due to such corrosion.
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申请公布号 |
US2006159946(A1) |
申请公布日期 |
2006.07.20 |
申请号 |
US20050285771 |
申请日期 |
2005.11.21 |
申请人 |
TOTO LTD. |
发明人 |
IWASAWA JUNICHI;HATONO HIRONORI;TERADA NAOYA;ASO YUJI;KIYOHARA MASAKATSU |
分类号 |
B05D1/12;C04B41/87;B32B15/00;C04B35/50;C23C24/04;H01J37/32;H01L21/3065;H01L29/12 |
主分类号 |
B05D1/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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