发明名称 |
Electronic memory device having high density non-volatile memory cells and a reduced capacitive interference cell-to-cell |
摘要 |
An electronic memory device with a high density of non-volatile memory cells has a reduced capacitance cell-to-cell interference. The memory cells are integrated on a semiconductor substrate and are organized in a matrix of cells with word lines and bit lines connected to the cells. Each memory cell includes at least one floating gate transistor having a floating gate region projecting from the substrate, and a control gate region capacitively coupled to the floating gate region. Between the cells of opposite word lines, a lateral coating is provided that includes at least one conductive layer floating along the direction of the bit lines.
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申请公布号 |
US2006158931(A1) |
申请公布日期 |
2006.07.20 |
申请号 |
US20050300053 |
申请日期 |
2005.12.14 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
KHOURI OSAMA;CAIMI CARLO;MASTRODOMENICO GIOVANNI;CAPRARA PAOLO |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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