发明名称 |
Borderless contact structures |
摘要 |
A borderless contact structure and method of fabricating the structure, the method including: (a) providing a substrate; (b) forming a polysilicon line on the substrate, the polysilicon line having sidewalls; (c) forming an insulating sidewall layer on the sidewalls of the polysilicon line; (d) removing a portion of the polysilicon line and a corresponding portion of the insulating sidewall layer in a contact region of the polysilicon line; and (e) forming a silicide layer on the sidewall of the polysilicon line in the contact region. Also an SRAM cell using the borderless contact structure and a method of fabricating the SRAM cell.
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申请公布号 |
US2006157743(A1) |
申请公布日期 |
2006.07.20 |
申请号 |
US20060375624 |
申请日期 |
2006.03.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;HORAK DAVID V.;KOBURGER CHARLES W.III |
分类号 |
H01L29/76;H01L29/745 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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