BACK JUNCTION SOLAR CELL AND PROCESS FOR PRODUCING THE SAME

摘要

A minute arrangement of p⁺ type diffusion layer and n⁺ type diffusion layer without contact with each other. On the backside (1a) of semiconductor substrate (1), there are simultaneously formed p⁺ type diffusion layer (2) and n⁺ type diffusion layer (3) in close vicinity of each other. Recessed groove (1b) is formed from the backside (1a) of the semiconductor substrate (1) to a border portion where outer edges of the p⁺ type diffusion layer (2) and n⁺ type diffusion layer (3) are brought into contact with each other to thereby separate the outer edges of the p⁺ type diffusion layer (2) and n⁺ type diffusion layer (3) from each other. As a result, the p⁺ type diffusion layer (2) and n⁺ type diffusion layer (3) are arranged in close vicinity of each other with the recessed groove (1b) interposed therebetween.