摘要 |
<p>A method (10) provides an interconnect (60, 160, 260) structure having enhanced structural support when underlying functional metal layers are insulated with a low modulus dielectric. A first metal layer (80) having a plurality of openings overlies the substrate. A first electrically insulating layer (82) overlies the first metal layer. A second metal layer (84) overlies the first electrically insulating layer, the second metal layer having a plurality of openings. An interconnect pad (61, 140) that defines an interconnect pad area overlies the second metal layer. At least a certain amount of the openings (98, 99) in the two metal layers are aligned to improve structural strength of the interconnect structure. The amount of alignment may differ depending upon the application and materials used. A bond wire connection or conductive bump may be used with the interconnect structure.</p> |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;HESS, KEVIN J.;DOWNEY, SUSAN H.;MILLER, JAMES W.;YONG, CHENG CHOI |
发明人 |
HESS, KEVIN J.;DOWNEY, SUSAN H.;MILLER, JAMES W.;YONG, CHENG CHOI |