发明名称 ORGANIC THIN FILM TRANSISTOR INCLUDING FLUORINE-BASED POLYMER THIN FILM, AND MANUFACTURING METHOD THEREFOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an organic thin film transistor (TFT) capable of simplifying process and planning cost cut effect because charge mobility and I<SB>on</SB>/I<SB>off</SB>are high, and formation of an organic semiconductor layer and a manufacture of insulating film can be easily attained through wet processing. <P>SOLUTION: In the organic TFT comprising a gate electrode 2, a gate insulating layer 3, an organic semiconductor layer 5, a source electrode 6, and a drain electrode 7 on a substrate 1, the organic TFT including a fluorine-based polymer layer 4 is prepared at the interface between the gate electrode 3 and the organic semiconductor layer 5. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006191115(A) 申请公布日期 2006.07.20
申请号 JP20060000318 申请日期 2006.01.05
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM JOO YOUNG;LEE EUN KYUNG;LEE BANG LIN;KOO BON WON;PARK HYUN JUNG;LEE SANG-YUN
分类号 H01L29/786;H01L21/312;H01L51/05;H01L51/30 主分类号 H01L29/786
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