摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an organic thin film transistor (TFT) capable of simplifying process and planning cost cut effect because charge mobility and I<SB>on</SB>/I<SB>off</SB>are high, and formation of an organic semiconductor layer and a manufacture of insulating film can be easily attained through wet processing. <P>SOLUTION: In the organic TFT comprising a gate electrode 2, a gate insulating layer 3, an organic semiconductor layer 5, a source electrode 6, and a drain electrode 7 on a substrate 1, the organic TFT including a fluorine-based polymer layer 4 is prepared at the interface between the gate electrode 3 and the organic semiconductor layer 5. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |