发明名称 FILL PLATED STRUCTURE OF INNER VIA HOLE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a fill plated structure of an inner via-hole in which a plating process is simplified while the heat conductivity of a substrate is increased, and to provide a manufacturing method thereof. SOLUTION: A fill plated structure of an inner via-hole, which includes an electroless plated layer 63 formed on a copper clad laminate having an inner via-hole formed therethrough, a first copper electroplated layer 64 formed on the electroless plated layer on the copper clad laminate and formed on an inner wall of the via-hole to form a belly portion having a belly shape, and a second copper electroplated layer 65 formed on the first copper electroplated layer of a surface of the copper clad laminate and formed on upper and lower portions of the first copper electroplated layer of the inner wall of the via-hole to fill the via-hole. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006188745(A) 申请公布日期 2006.07.20
申请号 JP20050147115 申请日期 2005.05.19
申请人 SAMSUNG ELECTRO MECH CO LTD 发明人 SONG CHANG KYU;KIM TAE-HOON;KIM GYONO;I UYON;MOK JEE-SOO
分类号 C25D7/00;C25D5/02;C25D5/10;C25D5/18;C25D5/56;H05K3/40;H05K3/46 主分类号 C25D7/00
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