| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device for assuring realizing micro-miniaturization of element (high density integration) and highly reliable stable high-speed storage operation and also assuring storage of 2 bits or more. SOLUTION: A first diffusing layer region and a second diffusing layer region 17, 18 are formed on a semiconductor substrate 10, and a channel forming region 31 is also formed to couple the first and second diffusing layer regions 17, 18. A gate insulating film 12 is formed on the channel forming region 31, and a gate electrode 13 is also formed on the gate insulating film 12. Moreover, charge holding bodies 61, 62 are formed to the both side walls of the gate insulating film 12 and the gate electrode 13. A carbon nano-tube is used to the channel forming region 31. COPYRIGHT: (C)2006,JPO&NCIPI
|
