发明名称 |
Integration of biaxial tensile strained NMOS and uniaxial compressive strained PMOS on the same wafer |
摘要 |
A method of fabricating a biaxial tensile strained layer for NMOS fabrication and a uniaxial compressive strained layer for PMOS fabrication on a single wafer for use in CMOS ICs, includes preparing a silicon substrate for CMOS fabrication; depositing, patterning and etching a first and second insulating layers; removing a portion of the second insulating layer from a PMOS active area; depositing a layer of epitaxial silicon on the PMOS active area; removing a portion of the second insulating layer from an NMOS active area; growing an epitaxial silicon layer and growing an epitaxial SiGe layer on the NMOS active area; implanting H<SUB>2</SUB><SUP>+ </SUP>ions; annealing the wafer to relax the SiGe layer; removing the remaining second insulating layer from the wafer; growing a layer of silicon; finishing a gate module; depositing a layer of SiO<SUB>2 </SUB>to cover the NMOS wafer; etching silicon in the PMOS active area; selectively growing a SiGe layer on the PMOS active area; wherein the silicon layer in the NMOS active area is under biaxial tensile strain, and the silicon layer in the PMOS active area is uniaxial compressive strained; and completing the CMOS device.
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申请公布号 |
US2006160291(A1) |
申请公布日期 |
2006.07.20 |
申请号 |
US20050039542 |
申请日期 |
2005.01.19 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
LEE JONG-JAN;MAA JER-SHEN;TWEET DOUGLAS J.;HSU SHENG T. |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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地址 |
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