发明名称 |
A THIN FILM TRANSISTOR, A METHOD FOR PREPARING THE SAME AND A FLAT PANEL DISPLAY EMPLOYING THE SAME |
摘要 |
<p>The thin film transistor of the present invention includes a gate electrode, source and drain electrodes insulated from the gate electrode, a semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes, an insulating layer, and a carrier blocking layer interposed between the semiconductor layer and the insulating layer and preventing electrons or holes moving through semiconductor layer from being trapped in the insulating layer. Since the thin film transistor is constructed such that the carrier blocking layer is interposed between the semiconductor layer and the insulating layer, the electrons or holes injected into the semiconductor layer can be prevented from being trapped in the insulating layer, thereby suppressing hysteresis characteristic. In addition, a reliable flat panel display device can be manufactured using the thin film transistor.</p> |
申请公布号 |
KR20060083065(A) |
申请公布日期 |
2006.07.20 |
申请号 |
KR20050003976 |
申请日期 |
2005.01.15 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
SUH, MIN CHUL;SO, MYEONG SEOB;KOO, JAE BON;YANG, NAM CHOUL |
分类号 |
H01L29/786;H01L21/31;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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