| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for easily forming a porous buffer layer when manufacturing an epitaxial wafer, and inexpensively forming a semiconductor crystal epitaxial layer. SOLUTION: A method for manufacturing the epitaxial wafer includes steps of: forming a single-crystal semiconductor layer on a single-crystal wafer; forming a mask layer having a nano-size dot on the single-crystal semiconductor layer; a step for etching the surface of the single-crystal semiconductor layer with the mask layer, and forming the porous buffer layer having a nano-size void; heat-treating the porous buffer layer; and forming an epitaxial substance layer on the porous buffer layer by an epitaxial growth method. COPYRIGHT: (C)2006,JPO&NCIPI
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