| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for amorphization/template re-crystallization for changing orientation in the selected region of a silicon, without remaining defect of high density, by preparing an anneal process optimized to remove defects caused by damage due to injection, in a single crystal silicon. <P>SOLUTION: The region of Si having a first crystal orientation is amorphised by iron-implantation, and is re-crystallized into the orientation of a template layer having different orientation, in an amorphising/template re-crystallization (ATR) process. A reoriented Si of low defective density in the process is formed by this method. More specifically, the invention relates to a high temperature annealing condition required for eliminating defects remaining in an Si-contained single crystal semiconductor material formed of the layer whose orientation is identical or different from the original orientation of amorphous layer by amorphising caused by ion-implantation and template re-crystallization. The main factor of that is a thermal process for removing defects remaining after initial re-crystallization annealing, in the temperature range of 1,250-1,330°C for several minutes to several hours. A reoriented Si of low defective density, formed by ATR, is provided as well for use with a hybrid orientation substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
