发明名称 METHOD FOR OPERATING MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To perform writing/erasing at a high speed/high accuracy by reducing the pulse operations for writing/erasing of a nonvolatile memory. <P>SOLUTION: The method and system for operating bits of memory cells in a memory array includes steps of; applying a first operating pulse intended to place the first cell into a predefined state to a terminal of a first cell; and applying a second operating pulse to a terminal of a second cell; the second operating pulse intended to place the second cell to the predefined state, and to have the pulse characteristic to be a function of the response of the first cell to the first operating pulse. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006190462(A) 申请公布日期 2006.07.20
申请号 JP20060001351 申请日期 2006.01.06
申请人 SAIFUN SEMICONDUCTORS LTD 发明人 MAAYAN EDUARDO;EITAN BOAZ
分类号 G11C16/02;G11C16/34;G11C29/02;G11C29/50 主分类号 G11C16/02
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