FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To achieve a group III-V nitride-based field effect transistor which has a T shaped gate electrode eliminating the need of electron beam exposure. SOLUTION: The field effect transistor comprises a first semiconductor layer 14 made of a plurality of laminated semiconductor films and a second semiconductor layer 15 formed on the first semiconductor layer 14. Source and drain electrodes 17 and 18 mutually spaced from each other are formed on the second semiconductor layer 15. An opening with a side wall having an insulating film 16 formed thereon for exposing the first semiconductor layer 14 is formed in a region sandwiched by the source and drain electrodes 17 and 18 of the second semiconductor layer 15. A gate electrode 19 contacted with the insulating film 16 and also contacted with the first semiconductor layer 14 at the bottom of the opening is formed in the opening. COPYRIGHT: (C)2006,JPO&NCIPI