发明名称 Memory array buried digit line
摘要 A method of forming a buried digit line is disclosed. Sacrificial spacers are formed along the sidewalls of an isolation trench, which is then filled with a sacrificial material. One spacer is masked while the other spacer is removed and an etch step into the substrate beneath the removed spacer forms an isolation window. Insulating liners are then formed along the sidewalls of the emptied trench, including into the isolation window. A digit line recess is then formed through the bottom of the trench between the insulating liners, which double as masks to self-align this etch. The digit line recess is then filled with metal and recessed back, with an optional prior insulating element deposited and recessed back in the bottom of the recess.
申请公布号 US2006160323(A1) 申请公布日期 2006.07.20
申请号 US20050036163 申请日期 2005.01.14
申请人 发明人 WELLS DAVID H.
分类号 H01L21/76;H01L21/31 主分类号 H01L21/76
代理机构 代理人
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