发明名称 Near-field exposure method and apparatus, near-field exposure mask, and device manufacturing method
摘要 Disclosed is a near-field exposure method and apparatus, a near-field exposure mask, and a device manufacturing method, wherein exposure is carried out on the basis of near field light. Specifically, the near-field exposure method disclosed is arranged so that a pressure difference is applied to between a front face and a rear face of an elastically deformable exposure mask to cause deformation of the exposure mask in accordance with a substrate to be exposed and to cause the exposure mask surface to follow a surface irregularity state of the substrate such that these surfaces are closely contacted to each other, for exposure based on near field light. The pressure difference applied to between the front and rear faces of the exposure mask is set at a predetermined pressure difference corresponding to surface roughness of the substrate to be exposed.
申请公布号 US2006160036(A1) 申请公布日期 2006.07.20
申请号 US20050529893 申请日期 2005.10.17
申请人 CANNON KABUSHIKI KAISHA 发明人 MIZUTANI NATSUHIKO
分类号 G03C5/04;G03F1/08;G03F1/14;G03F1/54;G03F1/60;G03F1/76;G03F7/20;H01L21/027;H01L21/302 主分类号 G03C5/04
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