发明名称 Feldeffekttransistor, insbesondere vertikaler Feldeffekttransistor, Speicherzelle und Herstellungsverfahren
摘要 A field effect transistor is provided. The field effect transistor includes a channel region, electrically conductive channel connection regions, and a control region. The electrically conductive channel connection regions adjoin the channel region along with a transistor dielectric. The control region is separated from the channel region by the transistor dielectric. In addition, the control region may comprise a monocrystalline material.
申请公布号 DE10348006(B4) 申请公布日期 2006.07.20
申请号 DE2003148006 申请日期 2003.10.15
申请人 INFINEON TECHNOLOGIES AG 发明人 TEWS, HELMUT
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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