| 摘要 |
FIELD: production of mono-crystals of dielectrics and semiconductors by oriented crystallization at drawing ingot upwards from melts, possibly manufacture of semiconductor and opto-electric mono-crystalline materials. ^ SUBSTANCE: method comprises steps of drawing mono-crystal from inner crucible having opening or openings and arranged inside outer crucible; setting initial compositions of melts in inner and outer crucibles; as crystal is drawn, moving inner crucible relative to outer one with use of computer at rate determined according to formula: v =(m-1)(dmc/dt)/(rhoL x Sin)+(dmc/dt)/(rhoL x So) where v - motion speed of inner crucible relative to outer one, "+" - downwards, "-" - upwards; m = dmf /dmc - replenishing parameter; mc - crystal mass; mf - mass of melt fed from outer crucible into inner crucible; t - time; rhoL - melt density; Sin - surface area of cross section of inner crucible; So - surface area of cross section of outer crucible. ^ EFFECT: possibility for controlling composition of mono-crystal and for creating preset lengthwise concentration profile of components of solid solution. ^ 6 cl, 1 ex, 3 dwg |
