| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide polishing solution capable of improving the yield by raising polishing speed and of realizing high flatness by the prevention of dishing, while preventing a scratch and surface roughness, at the time of polishing the metal layer of a wiring section, and to provide a chemical mechanical polishing method using the polishing solution. <P>SOLUTION: The polishing solution contains at least one kind of derivative selected out of a tetrazole derivative and an anthranilic acid derivative along with containing at least two sorts of grains whose hardness are different. The chemical mechanical polishing method uses the polishing solution. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
