| 摘要 |
PROBLEM TO BE SOLVED: To provide a charge-pump circuit that outputs a high voltage by using a boosting circuit with a smaller number of stages. SOLUTION: By giving a back-gate voltage for a MOS transistor constituting the charge-pump circuit by a diode, reduction in boosted voltage caused by an increase in the threshold voltage of the MOS transistor is suppressed. In addition, a second MOS transistor is provided between the back gate of the MOS transistor and the ground (GND) so that in-phase clock signals are inputted to the gate of the second MOS transistor and the capacitor thereof. COPYRIGHT: (C)2006,JPO&NCIPI
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