| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implanting device wherein dose correction attended by interruption of an ion implanting process and errors is not required since ions are injected so as not to deteriorate degree of vacuum. SOLUTION: This ion implanting device 100 has an ion beam generating mechanism 105, a scanner part 106, and an ion implanting chamber 107. A vacuum pump 108 evacuates the entire ion implanting device 100 including the ion implanting chamber 106. A work station 111 provides a prescribed value causing no neutralization of ions, for a vacuum gage 109. While ions are being implanted, when the measured result of the vacuum gage 109 is lower than the prescribed value, the work station 111 issues an order to a beam controller 112 so as to control a power supply relating to the operation of an ion source 101 for example lower than usual. Thereby, an ion beam IB is formed so that ion implantation is carried out with a second beam quantity lower than a first ion quantity. COPYRIGHT: (C)2006,JPO&NCIPI
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