| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrophotographic photoreceptor that while minimizing an absorption of short-wavelength image exposure at its surface layer, is capable of maintaining excellence in electrophotographic performance, such as resolving power. SOLUTION: The electrophotographic photoreceptor comprises a conductive base material, a photoconductive layer and a surface region layer superimposed on the photoconductive layer, wherein the surface region layer comprises a non-single-crystal silicon nitride film containing at least silicon and nitrogen atoms as a matrix wherein not only an element of Group 13 of the periodic table but also a carbon atom are contained. In the surface region layer, the content of the element of Group 13 of the periodic table based on the total amount of constituent atoms has a distribution such that there are at least two maximums in the direction of the thickness of the layer, and the average concentration (atm%) of nitrogen atoms satisfies 30 atm%≤N/(Si+N)≤70 atm%. COPYRIGHT: (C)2006,JPO&NCIPI
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