Method of manufacturing a hemisperical grain silicon layer and method of manufacturing a semiconductor device using the same

摘要

In a method of manufacturing a capacitor including a hemispherical grain (HSG) silicon layer, after forming a storage electrode electrically coupled to a contact region of a substrate, the HSG silicon layer is formed on the storage electrode by providing a first gas including silicon and a second gas onto a surface of the storage electrode with a volume ratio of about 1.0:0.1 to about 1.0:5.0. A dielectric layer and a plate electrode are sequentially formed on the HSG silicon layer. A grain size of the HSG silicon layer may be easily adjusted and abnormal growths of the HSG at a lower portion of the storage electrode may be suppressed. Therefore, the HSG silicon layer may be uniformly formed on the storage electrode, and a structural stability of the storage electrode may be improved to prevent electrical defects of the capacitor.