发明名称 Metal-insulator-metal capacitor and method of fabricating the same
摘要 In a metal-insulator-metal (MIM) capacitor and a method of fabricating the MIM capacitor, a metal-insulator-metal (MIM) capacitor comprises: a lower electrode pattern which is formed on a substrate and includes a conductive layer having a portion as a lower interconnect; a dielectric layer on the lower electrode pattern; a first upper electrode pattern on the dielectric layer; an interlayer insulating layer which covers the first upper electrode pattern, the dielectric layer, and the lower electrode pattern and has a planarized upper surface; a second upper electrode opening pattern formed in the interlayer insulating layer to expose the first upper electrode pattern; a second upper electrode which fills the opening pattern and has an upper surface that is substantially level with an upper surface of the interlayer insulating layer; and an upper interconnect on the interlayer insulating layer and contacts the second upper electrode.
申请公布号 US2006157766(A1) 申请公布日期 2006.07.20
申请号 US20050317859 申请日期 2005.12.23
申请人 WON SEOK-JUN;KWON DAE-JIN 发明人 WON SEOK-JUN;KWON DAE-JIN
分类号 H01L29/94 主分类号 H01L29/94
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