发明名称 |
Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus |
摘要 |
An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.
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申请公布号 |
US2006156980(A1) |
申请公布日期 |
2006.07.20 |
申请号 |
US20050321491 |
申请日期 |
2005.12.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
WON SEOK-JUN;YOO YONG-MIN;KIM DAE-YOUN;KIM YOUNG-HOON;KWON DAE-JIN;KIM WEON-HONG |
分类号 |
C23C16/00;C03C25/68;H01L21/302;H01L21/306;H01L21/31 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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