发明名称 Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
摘要 An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.
申请公布号 US2006156980(A1) 申请公布日期 2006.07.20
申请号 US20050321491 申请日期 2005.12.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 WON SEOK-JUN;YOO YONG-MIN;KIM DAE-YOUN;KIM YOUNG-HOON;KWON DAE-JIN;KIM WEON-HONG
分类号 C23C16/00;C03C25/68;H01L21/302;H01L21/306;H01L21/31 主分类号 C23C16/00
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