| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a NAND flash memory device in which block size can be easily changed. <P>SOLUTION: The NAND flash memory device is provided with: a memory block divided into first and second page groups; first and second switching sections connected between the first and the second page groups and a global line respectively to transfer an operating voltage; a block division selecting section outputting a division signal for determining to activate one or both of the first page group and the second page group; a page group selection control section outputting a first selection signal and a second selection signal in the same level or in different levels in accordance with the division signal, a page selection address signal and an erase operation signal; and first and second block switching sections controlling the first and the second switching sections in accordance with the fist and the second selection signals, respectively, and a block selection address signal. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
