| 摘要 |
PROBLEM TO BE SOLVED: To improve the mechanical and thermal resistances of a semiconductor device using a layer insulation film made of a low-dielectric constant insulator. SOLUTION: The semiconductor device has a semiconductor element formed on a semiconductor substrate 10, first wiring 41A formed above the substrate 10 electrically connected to the semiconductor element, and second wiring 42A formed above the first wiring 41A through a third layer insulation film 23 made of an insulator having a dielectric constant lower than a silicon oxide. The device further has first dummy wiring 41B formed on a region near the first or second wiring 41A or 42A on the semiconductor substrate 10. COPYRIGHT: (C)2006,JPO&NCIPI |
