| 摘要 |
PROBLEM TO BE SOLVED: To provide the element structure of a ferroelectric memory in which a ferroelectric element is hard to be damaged by a hydrogen atmosphere and ultraviolet rays generated in a ferroelectric memory element formation process, and to provide a method of manufacturing it. SOLUTION: The ferroelectric memory element includes: a ferroelectric capacitor constituted by a lower electrode 104, an oxide ferroelectric thin film 105, and an upper electrode 106 formed in a semiconductor substrate 100; and a hydrogen barrier film 107 formed on the ferroelectric capacitor. The hydrogen barrier film 107 is covered with an aluminum nitric oxide represented by a composition formula of an AlOxNy which contains an aluminum, an oxygen and a nitrogen. COPYRIGHT: (C)2006,JPO&NCIPI
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