NONVOLATILE MEMORY CELL HAVING CURRENT COMPENSATED FOR TEMPERATURE DEPENDENCY AND DATA READ METHOD THEREOF

摘要

A nonvolatile semiconductor memory device includes a memory cell array (21), read circuit (22, 23, 24, 25, 26, 27 and 33), program circuit (22, 23, 24, 25, 26 and 27), read voltage generating circuit (29), memory circuit (34) and switching circuit (35). The read voltage generating circuit generates and supplies a read voltage to the read circuit. The memory circuit (34) stores information which changes the temperature characteristic of a memory cell in the memory cell array (21). The switching circuit (25) changes the temperature dependency of read voltage generated from the read voltage generating circuit (29) based on information stored in the memory circuit (34).