| 摘要 |
<PICT:0853729/III/1> Modification of the process of the parent Specification for the deposition of silicon on a carrier of silicon, wherein the deposition takes place in a glass or quartz vessel at least part of which is transparent and is maintained at a temperature of 300-800 DEG C. throughout the deposition. The vessel is heated to the desired temperature by heat radiated from the carrier alone or together with heat from a surrounding electric furnace. In the former case the vessel may be provided with means for conserving the radiant heat, e.g. the outer surface of the vessel, except for one or more narrow strips, may be roughed, may be coated with aluminium oxide, or may be provided with a mirror coating of silver or gold. Alternatively the vessel may have radiant heatabsorbing foreign bodies, e.g. of gold or molybdenum distributed therein so as to preserve its transparency, or it may be surrounded by a separate reflector. As shown heating is provided solely by the passage of an electric current through two silicon rods 3 and a graphite bridge 5 enclosed in a quartz bell 2 provided with a gas inlet and outlet (not shown), the quartz bell being surrounded by a tubular reflector of polished aluminium having a vertical viewing slit 12 and an upwardly hinged aluminium lid 9. |
