Method of producing substrates for optoelectronic applications

摘要

The present invention relates to a method of producing a substrate for an optoelectronic application, the substrate having at least one active nitride layer on a final carrier and a metallic intermediate layer therebetween, wherein the method comprises: preparation of an auxiliary substrate wherein one semi-conducting nitride layer is placed on an auxiliary carrier; metallising the auxiliary substrate on the side of the nitride layer; bonding of the metallised carrier substrate with the final carrier; and removing of the auxiliary carrier after the bonding step. It is the object of the present invention to provide a method of this type in which the crystalline quality of the active nitride layer(s) can be improved. The object is solved by a method of the above mentioned type wherein the step of preparing the auxiliary substrate comprises: detaching a part from a massive semi-conducting nitride substrate; and transferring said part onto the auxiliary carrier to form the semi-conducting nitride layer thereon.