| 摘要 |
PROBLEM TO BE SOLVED: To treat a substrate at a high speed, without heating the substrate above its allowable temp. SOLUTION: This plasma reacting method is such that a rotating electrode 1, a high frequency power source for applying a high frequency voltage to the rotary electrode 1, and a substrate scanner for scanning a substrate 2 in a direction parallel to the rotating electrode 1 are provided, the rotary electrode 1 is rotated at a high speed, to form a high speed flow of reaction gas across a gap between the rotary electrode 1 and the substrate 2, a high frequency voltage is applied from the high frequency power source to the electrode 1 to generate a high density plasma P based on the reaction gas, and plasma reaction is generated between the plasma P and the substrate 2 being scanned by the substrate scanner. It comprises the steps of generating the high density plasma P, based on the reactive gas between the electrode 1 and the substrate 2 and a step of scanning the substrate 2 at a sufficiently high speed level to keep the temp. of the substrate 2 in the plasma reaction temp. from exceeding its allowable temp. |
