METHOD FOR FORMING WAVY NANOSTRUCTURES

摘要

The inventive method for forming a wavy nanostructure consists in spraying a semiconductor material by means of a flux of molecular nitrogen N 2 + ions in such a way that a periodic wavy nanostructure is formed on a material surface and the crests of said nanostructure waves are oriented in a perpendicular direction with respect to the incidence plane of ions. In order to increase the nanostructure amplitude, the additional spraying is carried out by means of a flux of O 2 + tension a ionic-bombardment plane which coincides with the plane of bombardment by the nitrogen N 2 + ions. The O 2 + ion bombardment energy and angle are selected such that the wavelengths of formable wavy nanostructures coincide at a single irradiation by N 2 + and O 2 + ions. Three variants for forming an ordered wavy nanostructure for arsenide, gallium and silicon structures are also disclosed.