Process for manufacturing a memory device having selector transistors for storage elements and memory device fabricated thereby

摘要

A process for manufacturing a memory device having selector bipolar transistors (25) for storage elements (65), includes the steps of: in a semiconductor body (20), forming at least a selector transistor (25), having at least an embedded conductive region (26), and forming at least a storage element (65), stacked on and electrically connected to the selector transistor (25); moreover, the step of forming at least a selector transistor (25) includes forming at least a raised conductive region (35, 36) located on and electrically connected to the embedded conductive region (26).