发明名称 |
Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current |
摘要 |
A method is disclosed for reducing metal diffusion in a semiconductor device. After forming a first metal portion over a substrate, a silicon carbon nitro-oxide (SiCNO) layer is deposited on the first metal portion. A dielectric layer is deposited over the SiCNO layer, and an opening is generated in the SiCNO layer and the dielectric layer for a second metal portion to be connected to the first metal portion, wherein the SiCNO layer reduces the diffusion of the first metal portion into the dielectric layer.
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申请公布号 |
US7078336(B2) |
申请公布日期 |
2006.07.18 |
申请号 |
US20030716818 |
申请日期 |
2003.11.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHENG YI-LUNG;WANG YING-LANG |
分类号 |
H01L21/4763;H01L21/768 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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