发明名称 |
Schottky barrier diode and method of making the same |
摘要 |
A power Schottky rectifier device having a plurality of first trenches filled in with an un-doped polycrystalline silicon layer and each first trenches also has a p-region beneath the bottom of said first trenches to block out reverse current while a reverse biased is applied and to reduce minority carrier while forward biased is applied. Thus, the power Schottky rectifier device can provide first fast switch speed. The power Schottky rectifier device is formed with termination region at an outer portion of the substrate. The manufacture method is also provided.
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申请公布号 |
US7078780(B2) |
申请公布日期 |
2006.07.18 |
申请号 |
US20040826304 |
申请日期 |
2004.04.19 |
申请人 |
CHIP INTEGRATION TECH., CO., LTD. |
发明人 |
WU SHYE-LIN |
分类号 |
H01L31/07;H01L21/329;H01L21/336;H01L29/872;H01L31/062 |
主分类号 |
H01L31/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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