发明名称 Multi-threshold-voltage integrated circuit having a non-volatile data storage circuit
摘要 An integrated circuit has a sleep switch, provided between a first power line and a second power line, which is constituted by a transistor of a first threshold voltage, and which becomes non-conducting in a sleep mode, and further has a latch circuit, connected to the second power line, which is constituted by a transistor of a second threshold voltage which is lower than the first threshold voltage, and a ferroelectric capacitor for storing data held in the latch circuit in accordance with the polarization direction of a ferroelectric film thereof. The integrated circuit also comprises a control signal generating circuit which, when returning to an active mode from the sleep mode, generates a plate signal for driving a terminal of the ferroelectric capacitor to generate a voltage in the latch circuit in accordance with the polarization direction, and generates a sleep signal for causing the sleep switch to conduct to thereby activate the latch circuit following the driving of the ferroelectric capacitor.
申请公布号 US7080270(B2) 申请公布日期 2006.07.18
申请号 US20030647432 申请日期 2003.08.26
申请人 FUJITSU LIMITED 发明人 YOKOZEKI WATARU;MASUI SHOICHI
分类号 G06F1/32;H01L21/822;G11C11/22;G11C14/00;H01L21/82;H01L27/04;H03K19/00;H03K19/173;H03K19/185 主分类号 G06F1/32
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