发明名称 Method for operating a memory device
摘要 A method and a system for operating bits of memory cells in a memory array, the method including applying a first operating pulse to a terminal of a first cell, the first operating pulse is intended to place the first cell into a predefined state; and applying a second operating pulse to a terminal of a second cell in the set, the second operating pulse is intended to place the second cell to the predefined state, and the pulse characteristics of the second operating pulse are a function of the response of the first cell to the first operating pulse.
申请公布号 US7079420(B2) 申请公布日期 2006.07.18
申请号 US20030747217 申请日期 2003.12.30
申请人 SAIFUN SEMICONDUCTORS LTD. 发明人 SHAPPIR ASSAF;AVNI DROR;EITAN BOAZ
分类号 G11C16/02;G11C16/04;G11C16/34;G11C29/02;G11C29/50 主分类号 G11C16/02
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