发明名称 |
Method for operating a memory device |
摘要 |
A method and a system for operating bits of memory cells in a memory array, the method including applying a first operating pulse to a terminal of a first cell, the first operating pulse is intended to place the first cell into a predefined state; and applying a second operating pulse to a terminal of a second cell in the set, the second operating pulse is intended to place the second cell to the predefined state, and the pulse characteristics of the second operating pulse are a function of the response of the first cell to the first operating pulse.
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申请公布号 |
US7079420(B2) |
申请公布日期 |
2006.07.18 |
申请号 |
US20030747217 |
申请日期 |
2003.12.30 |
申请人 |
SAIFUN SEMICONDUCTORS LTD. |
发明人 |
SHAPPIR ASSAF;AVNI DROR;EITAN BOAZ |
分类号 |
G11C16/02;G11C16/04;G11C16/34;G11C29/02;G11C29/50 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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