发明名称 |
Silicon-on-nothing fabrication process |
摘要 |
A method to fabricate a silicon-on-nothing device on a silicon substrate is provided. The disclosed silicon-on-nothing device is fabricated on an isolated floating silicon active area, thus completely isolated from the silicon substrate by an air gap. The isolated floating silicon active area is fabricated on a silicon germanium layer with a surrounding isolation trench. A plurality of anchors is then fabricated to anchor the silicon active area to the silicon substrate before selectively etching the silicon germanium layer to form the air gap. Isolation trench fill and planarization complete the formation of the isolated floating silicon active area. The silicon-on-nothing device on the isolated floating silicon active area can be polysilicon gate or metal gate and with or without raised source and drain regions.
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申请公布号 |
US7078298(B2) |
申请公布日期 |
2006.07.18 |
申请号 |
US20030441674 |
申请日期 |
2003.05.20 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
LEE JONG-JAN;HSU SHENG TENG |
分类号 |
H01L21/336;H01L21/76;H01L21/762;H01L21/764;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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