发明名称 Methods for producing a structured metal layer
摘要 The invention provides methods which can be used to structure even precious metal electrodes with conventional CMP steps, in particular with the aid of conventional slurries such as are already used to structure non-precious metals. Owing to the formation of an alloy, the chemically active components of the slurry are capable of attacking the additive to the precious metal in the alloy, as a result of which the surface of the alloy layer is roughened and the mechanical removal of the precious metal is increased.
申请公布号 US7078309(B2) 申请公布日期 2006.07.18
申请号 US20000734467 申请日期 2000.12.11
申请人 INFINEON TECHNOLOGIES AG 发明人 BEITEL GERHARD;SAENGER ANNETTE;HARTNER WALTER
分类号 H01L21/20;C23C16/40;H01L21/02;H01L21/321 主分类号 H01L21/20
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