发明名称 Whole chip ESD protection
摘要 This invention provides two circuit embodiments for a whole chip electrostatic discharge, ECD, protection scheme. It also includes a method for whole chip ESD protection. This invention relates to distributing the circuit of this invention next to each input/output pad in order to provide parallel ESD current discharge paths. The advantage of this invention is the ability to create a parallel discharge path to ground in order to discharge the damaging ESD current quickly so as to avoid circuit damage. The two circuit embodiments show how the protection circuits of this invention at both the unzapped I/O pads and the zapped I/O pad are connected in a parallel circuit for discharging ESD currents quickly. These protection embodiments require a small amount of semiconductor area, since the smaller protection circuits are distributed and placed at the locations of each I/O pad.
申请公布号 US7078772(B2) 申请公布日期 2006.07.18
申请号 US20040820320 申请日期 2004.06.08
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 WU YI-HSU;LEE JIAN-HSING;CHEN SHUI-HUNG
分类号 H01L23/62;H01L27/02;H01L29/74;H01L29/768;H03K5/08 主分类号 H01L23/62
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