| 摘要 |
A method of forming a sharp silicon structure, such as a silicon field emitter, includes oxidizing the silicon structure to form an oxide layer thereon, then removing the oxide layer. Oxidizing may occur at a low temperature and form a relatively thin (e.g., about 20 Å to about 40 Å) oxide layer on the silicon field emitter. The oxide layer may be removed by etching. A silicon field emitter that has been fabricated in accordance with the method is substantially free of crystalline defects and may include an emitter tip having a diameter as small as about 40 Å to about 20 Å or less.
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