| 发明名称 |
Method for fabricating a semiconductor device having a heat radiation layer including forming scribe lines and dicing |
| 摘要 |
A fabricating method for a semiconductor device includes forming a heat spreading material on rear surface of the semiconductor wafer. The semiconductor wafer has a plurality of device areas and scribe lines which are arranged between the device areas. After the heat spreading material is formed on rear surface of the semiconductor wafer, the semiconductor wafer is separated at the scribe lines.
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| 申请公布号 |
US7078265(B2) |
申请公布日期 |
2006.07.18 |
| 申请号 |
US20030717934 |
申请日期 |
2003.11.21 |
| 申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
TERUI MAKOTO;TANAKA YASUO;NOGUCHI TAKASHI |
| 分类号 |
H01L21/44;H01L23/12;H01L21/301;H01L21/48;H01L21/50;H01L21/56;H01L21/60;H01L21/68;H01L23/31;H01L23/34;H01L23/367;H01L23/373;H01L29/06 |
主分类号 |
H01L21/44 |
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