发明名称 |
Process for chemical-mechanical polishing of metal substrates |
摘要 |
Abrasive composition for the chemical-mechanical polishing in one stage of substrates used in the microelectronics semiconductors industry containing at least one metal layer and one insulator layer, comprising an acid aqueous suspension of individualized particles of colloidal silica, not linked to each other by siloxane bonds, having a mean particle diameter of between 5 and 20 nm and an oxidizing agent, and chemical-mechanical polishing process using such a composition.
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申请公布号 |
US7077727(B2) |
申请公布日期 |
2006.07.18 |
申请号 |
US20040500986 |
申请日期 |
2004.07.06 |
申请人 |
AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
JACQUINOT ERIC;BOUVET DIDIER;BEAUD PATRICE |
分类号 |
B24B1/00;B24B37/00;C09G1/02;C09K3/14;C23F3/00;H01L21/304;H01L21/321 |
主分类号 |
B24B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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